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题名: Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)
作者: Zhou JP;  Chai CL;  Yang SY;  Liu ZK;  Song SL;  Li YL;  Chen NF
发表日期: 2004
摘要: Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.
KOS主题词: Auger electron spectroscopy
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhou, JP; Chai, CL; Yang, SY; Liu, ZK; Song, SL; Li, YL; Chen, NF .Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD) ,JOURNAL OF CRYSTAL GROWTH,SEP 15 2004,270 (1-2):21-29
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