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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer
作者: Zhang BS;  Wu M;  Liu JP;  Chen J;  Zhu JJ;  Shen XM;  Feng G;  Zhao DG;  Wang YT;  Yang H;  Boyd AR
发表日期: 2004
摘要: This study describes the growth of a low-temperature AlN interlayer for crack-free GaN growth on Si(111). It is demonstrated that, in addition to the lower growth temperature, growth of the AlN interlayer under Al-rich conditions is a critical factor for crack-free GaN growth on Si(111) substrates. The effect of the AlN interlayer thickness and NH3/TMA1 ratios on the lattice constants of subsequently grown high temperature GaN was investigated by X-ray triple crystal diffraction. The results show that the elimination of micro-cracks is related to the reduction of the tensile stress in the GaN epitaxial layers. This was also coincident with a greater number of pits formed in the AlN interlayer grown under Al rich conditions. It is proposed that these pits act as centers for the generation of misfit dislocations, which in turn leads to the reduction of tensile stress. (C) 2004 Elsevier B.V. All rights reserved.
KOS主题词: X-ray crystallography
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, BS; Wu, M; Liu, JP; Chen, J; Zhu, JJ; Shen, XM; Feng, G; Zhao, DG; Wang, YT; Yang, H; Boyd, AR .Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer ,JOURNAL OF CRYSTAL GROWTH,OCT 1 2004,270 (3-4):316-321
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