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题名: A study of the degree of relaxation of AlGaN epilayers on GaN template
作者: Zhang JC;  Wu MF;  Wang JF;  Liu JP;  Wang YT;  Chen J;  Jin RQ;  Yang H
发表日期: 2004
摘要: The strain state of 570nm AlXGa1-xN layers grown on 600nm GaN template by metal organic chemical vapor deposition was studied using Rutherford backscattering (RBS)/channeling and triple-axis X-ray diffraction measurements. The results showed that the degree of relaxation (R) of AlxGa1-xN layers increased almost linearly when x less than or equal to 0.42 and reached to 70% when x = 0.42. Above 0.42, the value of R varied slowly and AI(x)Ga(1-x)N layers almost full relaxed when x = 1 (AIN). In this work the underlying GaN layer was in compressive strain, which resulted in the reduction of lattice misfit between GaN and AlxGa1-xN, and a 570nm AlxGa1-xN layer with the composition of about 0.16 might be grown on GaN coherently from the extrapolation. The different shape of (0004) diffraction peak was discussed to be related to the relaxation. (C) 2004 Elsevier B.V. All rights reserved.
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, JC; Wu, MF; Wang, JF; Liu, JP; Wang, YT; Chen, J; Jin, RQ; Yang, H .A study of the degree of relaxation of AlGaN epilayers on GaN template ,JOURNAL OF CRYSTAL GROWTH,OCT 1 2004,270 (3-4):289-294
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