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题名: Generation and behavior of pure-edge threading misfit dislocations in InxGa1-xN/GaN multiple quantum wells
作者: Lu W;  Li DB;  Li CR;  Zhang Z
发表日期: 2004
摘要: The relaxation of the misfit strain by the formation of misfit dislocations in InxGa1-xN/GaN multiple quantum wells grown by metal-organic chemical-vapor deposition was investigated by the cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. It is found that the misfit dislocations generated from strain relaxation are all pure-edge threading dislocations with burgers vectors of b=1/3<11 (2) over bar0>. The misfit dislocations arise from the strain relaxation due to the thickness of strained layer greater than the critical thickness. The relaxation of strained layer was mainly achieved by the formation of dislocations and localization of In, while the dislocations changed their slip planes from {0001} to {10 (1) over bar0}. With the increasing temperature, the efficiency of photoluminescence decrease sharply. It indicates that the relaxation of the misfit strain has a strong effect on optical efficiency of film. (C) 2004 American Institute of Physics.
KOS主题词: Vapor phase epitaxy
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Lu, W; Li, DB; Li, CR; Zhang, Z .Generation and behavior of pure-edge threading misfit dislocations in InxGa1-xN/GaN multiple quantum wells ,JOURNAL OF APPLIED PHYSICS,NOV 1 2004,96 (9):5267-5270
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