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题名: Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer
作者: Lu Y;  Cong GW;  Liu XL;  Lu DC;  Zhu QS;  Wang XH;  Wu JJ;  Wang ZG
发表日期: 2004
摘要: GaN epilayers were grown on Si(111) substrate by metalorganic chemical vapor deposition. By using the Al-rich AlN buffer which contains Al beyond stoichiometry, crack-free GaN epilayers with 1 mum thickness were obtained. Through x-ray diffraction (XRD) and secondary ion mass spectroscopy analyses, it was found that a lot of Al atoms have diffused into the under part of the GaN epilayer from the Al-rich AlN buffer, which results in the formation of an AlxGa1-xN layer at least with 300 nm thickness in the 1 mum thick GaN epilayer. The Al fraction x was estimated by XRD to be about 2.5%. X-ray photoelectron spectroscopy depth analysis was also applied to investigate the stoichiometry in the Al-rich buffer before GaN growth. It is suggested that the underlayer AlxGa1-xN originated from Al diffusion probably provides a compressive stress to the upper part of the GaN epilayer, which counterbalances a part of tensile stress in the GaN epilayer during cooling down and consequently reduces the cracks of the film effectively. The method using the Al diffusion effect to form a thick AlGaN layer is really feasible to achieve the crack-free GaN films and obtain a high crystal quality simultaneously. (C) 2004 American Institute of Physics.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Lu, Y; Cong, GW; Liu, XL; Lu, DC; Zhu, QS; Wang, XH; Wu, JJ; Wang, ZG .Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer ,JOURNAL OF APPLIED PHYSICS,NOV 1 2004,96 (9):4982-4988
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