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题名: Single-electron multiple-valued memory using ultra-small floating gate metal-oxide-semiconductor field effect transistor
作者: Ou XB;  Wu NJ
发表日期: 2004
摘要: This paper proposes a novel single-electron multiple-valued memory. It is a metal-oxide-semiconductor field effect transistor (MOS)-type memory with multiple separate control gates and floating gate layer, which consists of nano-crystal grains. The electron can tunnel among the grains (floating gates) and between the floating gate layer and the MOS channel. The memory can realize operations of 'write', 'store' and 'erase' of multiple-valued signals exceeding three values by controlling the single electron tunneling behavior. We use Monte Carlo method to simulate the operation of single-electron four-valued memory. The simulation results show that it can operate well at room temperature.
刊名: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Ou, XB; Wu, NJ .Single-electron multiple-valued memory using ultra-small floating gate metal-oxide-semiconductor field effect transistor ,JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,OCT 15 2004,43 (10B):L1359-L1361
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