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题名: Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition
作者: Chen DJ;  Shen B;  Bi ZX;  Zhang KX;  Gu SL;  Zhang R;  Shi, Y;  Zheng YD;  Sun XH;  Wan SK;  Wang ZG
发表日期: 2005
摘要: The GaN-rich side of GaNP ternary alloys has been successfully synthesized by light-radiation heating and low-pressure metal-organic chemical vapor deposition. X-ray diffraction (XRD) rocking curves show that the ( 0002) peak of GaNP shifts to a smaller angle with increasing P content. From the GaNP photoluminescence (PL) spectra, the red shifts from the band-edge emission of GaN are determined to be 73, 78 and 100 meV, respectively, in the GaNP alloys with the P contents of 1.5%, 5.5% and 7.5%. No PL peak or XRD peak related to GaP is observed, indicating that phase separation induced by the short-range distribution of GaP-rich regions in the GaNP layer has been effectively suppressed. The phase-separation suppression in the GaNP layer is associated with the high growth rate and the quick cooling rate under the given growth conditions, which can efficiently restrain the accumulation of P atoms in the GaNP layer.
KOS主题词: atomic layer deposition
刊名: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Chen, DJ; Shen, B; Bi, ZX; Zhang, KX; Gu, SL; Zhang, R; Shi, Y; Zheng, YD; Sun, XH; Wan, SK; Wang, ZG .Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition ,APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,JAN 2005,80 (1):141-144
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