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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates
作者: Bian LF;  Jiang DS;  Tan PH;  Lu SL;  Sun BQ;  Li LH;  Harmand, JC
发表日期: 2004
摘要: The photoluminescence (PL) characteristics of GaAsSbN/GaAs epilayers grown by molecular beam epitaxy (MBE) are carefully investigated. The results show that antimony (Sb) incorporation into GaNAs material has less influence on the N-induced localization states. For the same N concentration, GaAsSbN material can reach an emission wavelength near 1.3 mum more easily than GaInNAs material. The rapid thermal annealing (RTA) experiment shows that the annealing induced rearrangement of atoms and related blueshift in GaAsSbN epilayers are smaller than those in GaNAs and GaInNAs epilayers. The GaAsSbN material can keep a longer emission wavelength near 1.3 mum-emission even after the annealing treatment. Raman spectroscopy analysis gives further insight into the structure stability of GaAsSbN material after annealing. (C) 2004 Elsevier Ltd. All rights reserved.
刊名: SOLID STATE COMMUNICATIONS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Bian, LF; Jiang, DS; Tan, PH; Lu, SL; Sun, BQ; Li, LH; Harmand, JC .Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates ,SOLID STATE COMMUNICATIONS,DEC 2004,132 (10):707-711
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