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题名: Growth of GaSb and GaInAsSb layers for thermophotovolatic cells by liquid phase epitaxy - art. no. 68411E
作者: Liu L;  Chen NF;  Gao FB;  Yin ZG;  Bai YM;  Zhang XW
出版日期: 2008
会议日期: NOV 12-14, 2007
摘要: GaSb based cells as receivers in thermophotovoltaic system have attracted great interest and been extensively studied in the recent 15 years. Although nowadays the manufacturing technologies have made a great progress, there are still some details need to make a further study. In this paper, undoped and doped GaSb layers were grown on n-GaSb (100) substrates from both Ga-rich and Sb-rich solutions using liquid phase epitaxy (LPE) technique. The nominal segregation coefficients k of intentional doped Zn were 1.4 and 8.8 determined from the two kinds of GaSb epitaxial layers. Additionally, compared with growing from Ga-rich solutions, the growing processes from Sb-rich solutions were much easier to control and the surface morphologies of epitaxial layers were smoother. Further-more, in order to broaden the absorbing edge, Ga1-xInxAsySb1-y quaternary alloys were grown on both GaSb and InAs substrates from In-rich solutions, under different temperature respectively.
会议名称: Conference on Solid State Lighting and Solar Energy Technologies
会议文集: SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Liu, L ; Chen, NF ; Gao, FB ; Yin, ZG ; Bai, YM ; Zhang, XW .Growth of GaSb and GaInAsSb layers for thermophotovolatic cells by liquid phase epitaxy - art. no. 68411E .见:SPIE-INT SOC OPTICAL ENGINEERING .SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2008,6841: E8411-E8411
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