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题名: Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I
作者: Zhao, YW;  Zhang, F;  Zhang, R;  Dong, ZY;  Wei, XC;  Zeng, YP;  Li, JM
出版日期: 2008
会议日期: NOV 12-14, 2007
摘要: Hall effect, photoluminescence (PL), infrared absorption, deep level transient spectroscopy (DLTS), and Raman scattering have been used to study property and defects of ZnO single crystal grown by a chemical vapor transport method (CVT). As-grown ZnO is N type with free electron density Of 10(16)-10(17)cm(-3). It has a slight increase after 900 degrees C annealing in oxygen ambient. The DLTS measurement revealed four deep level defects with energy at 0.30eV, 0.50eV, 0.68eV and 0.90eV in the as-grown ZnO sample, respectively. After the high temperature annealing, only the 0.5eV defect survive and has a concentration increase. PL results of the as-grown and annealed ZnO indicate that the well-known green emission disappear after the annealing. The result suggests a correlation between the 0.68eV defect and the green PL peak. Results of P-doped ZnO were also compared with the undoped ZnO sample. The nature of the defects and their influence on the material property have been discussed.
会议名称: Conference on Solid State Lighting and Solar Energy Technologies
KOS主题词: Zinc oxide;  defect
会议文集: SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES
专题: 中国科学院半导体研究所(2009年前)_会议论文

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推荐引用方式:
Zhao, YW ; Zhang, F ; Zhang, R ; Dong, ZY ; Wei, XC ; Zeng, YP ; Li, JM .Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I .见:SPIE-INT SOC OPTICAL ENGINEERING .SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2008,6841: I8410-I8410
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