Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test
Zhou, W; Yang, JL; Li, Y; Yang, FH; Yang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
2008
会议名称3rd IEEE International Conference of Nano/Micro Engineered and Molecular Systems
会议录名称2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS
页码VOLS 1-3: 253-256
会议日期JAN 06-09, 2008
会议地点Sanya, PEOPLES R CHINA
出版地345 E 47TH ST, NEW YORK, NY 10017 USA
出版者IEEE
ISBN978-1-4244-1907-4
部门归属[zhou, wei; yang, jinling; li, yan; yang, fuhua] chinese acad sci, inst semicond, beijing 100864, peoples r china
摘要Bulge test combined with a refined load-deflection model for long rectangular membrane was applied to determine the mechanical and fracture properties of PECVD silicon nitride (SiNx) thin films. Plane-strain modulus E-ps prestress s(0), and fracture strength s(max) of SiNx thin films deposited both on bare Si substrate and on SiO2-topped Si substrate were extracted. The SiNx thin films on different substrates possess similar values of E-ps and s(0) but quite different values of s(max). The statistical analysis of fracture strengths were performed by Weibull distribution function and the fracture origins were further predicted.
关键词Bulge Test Fracture Property Silicon Nitride Weibull Distribution Function
学科领域微电子学
主办者IEEE.; State Key Lab Multi Spectral Informat Proc Technol.; Chinese Soc Micro Nano Technol.; Ctr Micro & Nano Syst.; IEEE Nanotechnol Council.; Shenyang Inst Automat.; Univ California.; UCLA, Ctr Cell Control.; Global Engn Technol Inst.; Nanosurf AG, Smart Instruments Nanosci & Nanotechnol.; US Army Int Technol Ctr, Pacific.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/7770
专题中国科学院半导体研究所(2009年前)
通讯作者Yang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China.
推荐引用方式
GB/T 7714
Zhou, W,Yang, JL,Li, Y,et al. Fracture properties of PECVD silicon nitride thin films by long rectangular memrane bulge test[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-3: 253-256.
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