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题名: InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer
作者: Wang H (Wang Hui);  Zhu JH (Zhu Ji-Hong);  Jiang DS (Jiang De-Sheng);  Zhu JJ (Zhu Jian-Jun);  Zhao DG (Zhao De-Gang);  Liu ZS (Liu Zong-Shun);  Zhang SM (Zhang Shu-Ming);  Yang H (Yang Hui)
发表日期: 2009
摘要: Mg-doped p-InGaN layers with In composition of about 10% are grown by metalorganic chemical vapor deposition (MOCVD). The effect of the annealing temperature on the p-type behavior of Mg-doped InGaN is studied. It is found that the hole concentration in p-InGaN increases with a rising annealing temperature in the range of 600 850 C, while the hole mobility remains nearly unchanged until the annealing temperature increases up to 750 C, after which it decreases. On the basis of conductive p-type InGaN growth, the p-In0.1Ga0.9N/i-In0.1Ga0.9N/n-GaN junction structure is grown and fabricated into photodiodes. The spectral responsivity of the InGaN/GaN p-i-n photodiodes shows that the peak responsivity at zero bias is in the wavelength range 350-400 nm.
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang, H (Wang Hui); Zhu, JH (Zhu Ji-Hong); Jiang, DS (Jiang De-Sheng); Zhu, JJ (Zhu Jian-Jun); Zhao, DG (Zhao De-Gang); Liu, ZS (Liu Zong-Shun); Zhang, SM (Zhang Shu-Ming); Yang, H (Yang Hui) .InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer ,CHINESE PHYSICS LETTERS,OCT 2009 ,26(10):Art.No.107302
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