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题名: Efficient hole transport in asymmetric coupled InGaN multiple quantum wells
作者: Zhang JY (Zhang Jiang-Yong);  Cai LE (Cai Li-E);  Zhang BP (Zhang Bao-Ping);  Hu XL (Hu Xiao-Long);  Jiang F (Jiang Fang);  Yu JZ (Yu Jin-Zhong);  Wang QM (Wang Qi-Ming)
发表日期: 2009
摘要: InGaN based light emitting devices (LEDs) with asymmetric coupled quantum wells (AS-QWs) and conventional symmetric coupled quantum wells (CS-QWs) active structures were grown by metal-organic chemical vapor deposition technique. The LEDs with AS-QWs active region show improved light emission intensity and reduced forward voltage compared with LEDs with CS-QWs active region. Based on the electroluminescence measurements and the devices structure analysis, it can be concluded that these improvements are mainly attributed to the efficient hole tunneling through barriers and consequently the uniform distribution of carriers in the AS-QWs. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3254232]
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, JY (Zhang, Jiang-Yong); Cai, LE (Cai, Li-E); Zhang, BP (Zhang, Bao-Ping); Hu, XL (Hu, Xiao-Long); Jiang, F (Jiang, Fang); Yu, JZ (Yu, Jin-Zhong); Wang, QM (Wang, Qi-Ming) .Efficient hole transport in asymmetric coupled InGaN multiple quantum wells ,APPLIED PHYSICS LETTERS,OCT 19 2009,95(16):Art.No.161110
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