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题名: Analysis on the high luminous flux white light from GaN-based laser diode
作者: Xu Y;  Hu H;  Chen L;  Song G;  Zhuang W
发表日期: 2010
摘要: We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emits in the yellow region when excited by the blue laser light. At 500 mA injection current the luminous flux and the luminous efficacy were 113 lm and 44 lm/W, respectively. The relationship of the luminous flux and the luminous efficacy of the white light with an injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I'Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.
刊名: APPLIED PHYSICS B-LASERS AND OPTICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Xu, Y (Xu, Y.); Hu, H (Hu, H.); Chen, L (Chen, L.); Song, G (Song, G.); Zhuang, W (Zhuang, W.) .Analysis on the high luminous flux white light from GaN-based laser diode ,APPLIED PHYSICS B-LASERS AND OPTICS,JAN 2010 ,98(1):83-86
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