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题名: Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction
作者: Liu, JQ (Liu, J. Q.);  Wang, JF (Wang, J. F.);  Qiu, YX (Qiu, Y. X.);  Guo, X (Guo, X.);  Huang, K (Huang, K.);  Zhang, YM (Zhang, Y. M.);  Hu, XJ (Hu, X. J.);  Xu, Y (Xu, Y.);  Xu, K (Xu, K.);  Huang, XH (Huang, X. H.);  Yang, H (Yang, H.)
发表日期: 2009
摘要: The full-width at half-maximum (FWHM) of an x-ray rocking curve (XRC) has been used as a parameter to determine the tilt and twist angles of GaN layers. Nevertheless, when the thickness of GaN epilayer reaches several microns, the peak broadening due to curvature becomes non-negligible. In this paper, using the (0 0 l), l = 2, 4, 6, XRC to minimize the effects of wafer curvature was studied systematically. Also the method to determine the tilt angle of a curved GaN layer was proposed while the Williamson-Hall plot was unsuitable. It was found that the (0 0 6) XRC-FWHM had a significant advantage for high-quality GaN layers with the radius curvature of r less than 3.5 m. Furthermore, an extrapolating method of gaining a reliable tilt angle has also been proposed, with which the calculated error can be improved by 10% for r < 2 m crystals compared with the (0 0 6) XRC-FWHM. In skew geometry, we have demonstrated that the twist angles deriving from the (2 0 4) XRC-FWHM are in accord with those from the grazing incidence in-plane diffraction (IP-GID) method for significantly curved samples.
KOS主题词: Thin films
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu, JQ (Liu, J. Q.); Wang, JF (Wang, J. F.); Qiu, YX (Qiu, Y. X.); Guo, X (Guo, X.); Huang, K (Huang, K.); Zhang, YM (Zhang, Y. M.); Hu, XJ (Hu, X. J.); Xu, Y (Xu, Y.); Xu, K (Xu, K.); Huang, XH (Huang, X. H.); Yang, H (Yang, H.) .Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,DEC 2009 ,24(12):Art.No.125007
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