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题名: Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area
作者: Liu WB;  Zhao DG;  Sun X;  Zhang S;  Jiang DS;  Wang H;  Zhang SM;  Liu ZS;  Zhu JJ;  Wang YT;  Duan LH;  Yang H
发表日期: 2009
摘要: Visible-blind p-i-n avalanche photodiodes (APDs) were fabricated with high-quality GaN epilayers deposited on c-plane sapphire substrates by metal-organic chemical vapour deposition. Due to low dislocation density and a sophisticated device fabrication process, the dark current was as small as similar to 0.05 nA under reverse bias up to 20V for devices with a large diameter of 200 mu m, which was among the largest device area for GaN-based p-i-n APDs yet reported. When the reverse bias exceeded 38V the dark current increased sharply, exhibiting a bulk avalanche field-dominated stable breakdown without microplasma formation or sidewall breakdown. With ultraviolet illumination (360 nm) an avalanche multiplication gain of 57 was achieved.
KOS主题词: Surface contamination;  Detectors;  Development
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu WB ; Zhao DG ; Sun X ; Zhang S ; Jiang DS ; Wang H ; Zhang SM ; Liu ZS ; Zhu JJ ; Wang YT ; Duan LH ; Yang H .Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009 ,42(1):Art. No. 015108
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