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题名: Effect of beta-irradiation on photoluminescence of MOCVD grown GaN
作者: Majid A;  Israr M;  Zhu JJ;  Ali A
发表日期: 2009
摘要: The effect of beta particles interaction on the optical properties of MOCVD grown GaN is reported. A significant change in luminescence properties of GaN is observed after exposing the material with 0.6 MeV beta particles with low dose of 10(12) cm(-2). The results obtained from photoluminescence measurements of irradiated GaN samples in low dose are found contradictory to those reported in literature for samples irradiated with heavy dose (> 10(15) cm(-2)) of electron. An increase in intensity of yellow luminescence has been observed with increasing dose of beta particles which is in disagreement to the already reported results in literature for heavily irradiated samples. A model has been proposed to sort out this inconsistency. The increase in YL intensity at low dose is attributed to the increase in concentration of VGaON complex whereas production of non-radiative VGaON clusters is assumed to justify the decrease in YL intensity at high dose.
KOS主题词: ELECTRON IRRADIATION;  Gallium nitride;  Thin films
刊名: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Majid A ; Israr M ; Zhu JJ ; Ali A .Effect of beta-irradiation on photoluminescence of MOCVD grown GaN ,JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2009 ,20(1):14-16
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