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题名: Raman scattering study on Ga1-xMnxAs prepared by Mn ions implantation, deposition and post-annealing
作者: Islam MR;  Chen NF;  Yamada M
发表日期: 2009
摘要: Raman scattering measurements have been performed in Ga1-xMnxAs crystals prepared by Mn ions implantation, deposition, and post-annealing. The Raman spectrum measured from the implanted surface of the sample shows some weak phonon modes in addition to GaAs-like phonon modes, where the GaAs-like LO and TO phonons are found to be shifted by approximately 4 and 2 cm(-1), respectively, in the lower frequency direction compared to those observed from the unimplanted surface of the sample. The weak vibrational modes observed are assigned to hausmannite Mn3O4 like. The coupled LO-phonon plasmon mode (CLOPM), and defects and As related vibrational modes caused by Mn ions implantation, deposition, and post-annealing are also observed. The compositional dependence of GaAs-like LO phonon frequency is developed for strained and unstrained conditions and then using the observed LOGaAs peak, the Mn composition is evaluated to be 0.034. Furthermore, by analyzing the intensity of CLOPM and unscreened LOGaAs phonon mode, the hole density is evaluated to be 1.84 x 10(18) cm(-3). (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
KOS主题词: Raman effect;  semiconductor;  sedimentation
刊名: CRYSTAL RESEARCH AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Islam MR ; Chen NF ; Yamada M .Raman scattering study on Ga1-xMnxAs prepared by Mn ions implantation, deposition and post-annealing ,CRYSTAL RESEARCH AND TECHNOLOGY,2009 ,44(2):215-220
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