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题名: High responsivity resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector for wavelength of similar to 1 mu m at room temperature
作者: Sun XM;  Zhang H;  Zhu H;  Xu P;  Li GR;  Liu J;  Zheng HZ
发表日期: 2009
摘要: The characteristics of a resonant cavity-enhanced InGaAs/GaAs quantum-dot n-i-n photodiode with only a bottom distributed Bragg reflector used as the cavity mirror, are reported. To suppress the dark current, an AlAs layer is inserted into the device structure as the blocking layer. It turns out that the structure still possesses the resonant coupling nature, and makes Rabi splitting discernible in the photoluminescence spectra. The measured responsivity spectrum of the photocurrent shows a peak at lambda = 1030 nm, and increases rapidly as the bias voltage increases. A peak responsivity of 0.75 A/W, or equivalently an external quantum efficiency of 90.3%, is obtained at V-bias = -1.4 V.
刊名: ELECTRONICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun XM ; Zhang H ; Zhu H ; Xu P ; Li GR ; Liu J ; Zheng HZ .High responsivity resonant-cavity-enhanced InGaAs/GaAs quantum-dot photodetector for wavelength of similar to 1 mu m at room temperature ,ELECTRONICS LETTERS,2009 ,45(6):329-330
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