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题名: Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers
作者: Ji HM;  Cao YL;  Yang T;  Ma WQ;  Cao Q;  Chen LH
发表日期: 2009
摘要: We report an experimental and theoretical study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers. The maximum modal gain of the QD laser with five stacks of QDs is as high as 17.5 cm(-1) which is the same as that of the undoped laser with identical structures. The expression of the maximum modal gain is derived and it is indicated that p-doping has no effect to the maximum modal gain. We theoretically calculated the maximum modal gain of the QD lasers and the result is in a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial to achieving a greater maximum modal gain that leads to lower threshold current density and higher differential modal gain, which is good for the application of p-doped 1.3 mu m InAs/GaAs QD lasers in optical communications systems.
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Ji HM ; Cao YL ; Yang T ; Ma WQ ; Cao Q ; Chen LH .Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers ,ACTA PHYSICA SINICA,2009 ,58(3):1896-1900
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