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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application
作者: Wang XL;  Chen TS;  Xiao HL;  Tang J;  Ran JX;  Zhang ML;  Feng C;  Hou QF;  Wei M;  Jiang LJ;  Li JM;  Wang ZG
发表日期: 2009
摘要: Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.
KOS主题词: Modulation-doped field-effect transistors;  atomic layer deposition
刊名: SOLID-STATE ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang XL ; Chen TS ; Xiao HL ; Tang J ; Ran JX ; Zhang ML ; Feng C ; Hou QF ; Wei M ; Jiang LJ ; Li JM ; Wang ZG .An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application ,SOLID-STATE ELECTRONICS,2009 ,53(3):332-335
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