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题名: Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation
作者: Ding K;  Zeng YP;  Duan RF;  Wei XC;  Wang JX;  Ma P;  Lu HX;  Cong PP;  Li JM
发表日期: 2009
摘要: InGaN/GAN multiple quantum wells grown by metal-organic chemical vapor deposition were irradiated with the electron beam from a low energy accelerator. The electron irradiation induced a redshift by 50 meV in the photoluminescence spectra of the electron-irradiated InGaN/GaN quantum wells, irrespective of the exposure time to the electron beam which ranges from 10 to 1000s. The localization parameter extracted from the temperature-dependent photoluminescence spectra was found to increase in the Irradiated samples. Analysis of the intensity of the longitudinal optical phonon sidebands showed the enhancement of the exciton-phonon coupling, indicating that the excitons are more strongly localized in the irradiated InGaN wells. The change in the pholotuminescence spectra. In the irradiated InGa/GAN quantum wells were explained in terms of the increase of indium concentration in indium rich clusters induced by the electron irradiation (C) 2009 The Japan Society of Applied Physics
KOS主题词: Localization;  Semiconductors;  emission;  Boxes;  Containers;  Strip
刊名: JAPANESE JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Ding K ; Zeng YP ; Duan RF ; Wei XC ; Wang JX ; Ma P ; Lu HX ; Cong PP ; Li JM .Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation ,JAPANESE JOURNAL OF APPLIED PHYSICS,2009 ,48(2):Art. No. 021001
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