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题名: Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell
作者: Liu L;  Chen NF;  Bai YM;  Cui M;  Zhang H;  Gao FB;  Yin ZG;  Zhang XW
发表日期: 2009
摘要: GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160A degrees C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell's work temperature, which are consistent with the viewpoint of energy gap narrowing effect. The short-circuit current density temperature coefficients dJ (sc)/dT of GaInP subcell and GaAs subcell are determined to be 8.9 and 7.4 mu A/cm(2)/A degrees C from the quantum efficiency data, respectively. And the open-circuit cell voltage temperature coefficients dV (oc)/dT calculated based on a theoretical equation are -2.4 mV/A degrees C and -2.1 mV/A degrees C for GaInP subcell and GaAs subcell.
KOS主题词: QUANTUM EFFICIENCY;  Temperature Coefficient;  solar cell
刊名: SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Liu L ; Chen NF ; Bai YM ; Cui M ; Zhang H ; Gao FB ; Yin ZG ; Zhang XW .Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell ,SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES,2009 ,52(5):1176-1180
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