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题名: Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates
作者: Li MC;  Qiu YX;  Liu GJ;  Wang YT;  Zhang BS;  Zhao LC
发表日期: 2009
摘要: GaSb and InSb epilayers grown on GaAs (001) vicinal substrates misoriented toward (111) plane were studied using high resolution x-ray diffraction. The results show that GaSb and InSb epilayers take on positive crystallographic tilt, and the asymmetric distribution of 60 degrees misfit dislocations in {111} glide planes have an effect on the tilt. In addition, the vicinal substrate influences the distribution of the threading dislocations in {111} glide planes, and the density of dislocation in the (111) plane is higher than in the ((1) over bar(1) over bar1) plane. A model was proposed to interpret the distribution of full width at half maximum, which can help us understand the formation and glide process of the dislocations. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3115450]
KOS主题词: X-ray crystallography;  atomic layer deposition;  Photography--Films;  Finite volume method
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Li MC ; Qiu YX ; Liu GJ ; Wang YT ; Zhang BS ; Zhao LC .Distribution of dislocations in GaSb and InSb epilayers grown on GaAs (001) vicinal substrates ,JOURNAL OF APPLIED PHYSICS,2009 ,105(9):Art. No. 094903
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