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题名: Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation
作者: Wei TB;  Hu Q;  Duan RF;  Wang JX;  Zeng YP;  Li JM;  Yang Y;  Liu YL
发表日期: 2009
摘要: In this study, the deformation mechanisms of nonpolar GaN thick films grown on m-sapphire by hydride vapor phase epitaxy (HVPE) are investigated using nanoindentation with a Berkovich indenter, cathodoluminescence (CL), and Raman microscopy. Results show that nonpolar GaN is more susceptible to plastic deformation and has lower hardness than c-plane GaN. After indentation, lateral cracks emerge on the nonpolar GaN surface and preferentially propagate parallel to the < 11 (2) over bar0 > orientation due to anisotropic defect-related stresses. Moreover, the quenching of CL luminescence can be observed to extend exclusively out from the center of the indentations along the < 11 (2) over bar0 > orientation, a trend which is consistent with the evolution of cracks. The recrystallization process happens in the indented regions for the load of 500 mN. Raman area mapping indicates that the distribution of strain field coincides well with the profile of defect-expanded dark regions, while the enhanced compressive stress mainly concentrates in the facets of the indentation.
KOS主题词: Hardness;  Cathodoluminescence;  Electroluminescence
刊名: NANOSCALE RESEARCH LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wei TB ; Hu Q ; Duan RF ; Wang JX ; Zeng YP ; Li JM ; Yang Y ; Liu YL .Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation ,NANOSCALE RESEARCH LETTERS ,2009 ,4(7):753-757
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