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题名: Optical properties of aluminum-, gallium-, and indium-doped Bi4Ti3O12 thin films
作者: Jia CH;  Chen YH;  Zhang WF
发表日期: 2009
摘要: Undoped and Al-, Ga-, and In-doped Bi4Ti3O12 thin films were prepared on fused quartz substrates by chemical solution deposition. Their microstructures and optical properties were investigated by x-ray diffraction and UV-visible-NIR spectrophotometer, respectively. The optical band-gap energies, Urbach energies, and linear refractive indices of all the films are derived from the transmittance spectrum. Following the single oscillator model, the dispersion parameters such as the average oscillator energy (E-0) and dispersion energy (E-d) are achieved. The energy band gap and refractive indices are found to decrease with introducing the dopants of Al, Ga, and In, which is useful for the band-gap engineering and optical waveguide devices. The refractive index dispersion parameter (E-0/S-0) increases and the chemical bonding quantity (beta) decreases in all the films compared with those of bulk. It is supposed to be caused by the nanosize grains in films. (c) 2009 American Institute of Physics. [DOI 10.1063/1.3138813]
KOS主题词: Pulsed laser deposition;  Electrical properties;  Substrate
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Jia CH ; Chen YH ; Zhang WF .Optical properties of aluminum-, gallium-, and indium-doped Bi4Ti3O12 thin films ,JOURNAL OF APPLIED PHYSICS,2009 ,105(11):Art. No. 113108
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