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题名: Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment
作者: You JB;  Zhang XW;  Cai PF;  Dong JJ;  Gao Y;  Yin ZG;  Chen NF;  Wang RZ;  Yan H
发表日期: 2009
摘要: The ZnO films deposited by magnetron sputtering were treated by H/O plasma. It is found that the field emission (FE) characteristics of the ZnO film are considerably improved after H-plasma treatment and slightly deteriorated after O-plasma treatment. The improvement of FE characteristics is attributed to the reduced work function and the increased conductivity of the ZnO H films. Conductive atomic force microscopy was employed to investigate the effect of the plasma treatment on the nanoscale conductivity of ZnO, these findings correlate well with the FE data and facilitate a clearer description of electron emission from the ZnO H films.
KOS主题词: Atomic force microscopy;  Field emission;  Hydrogen;  Glass;  Amorphous semiconductors;  Ion implantation;  diode sputtering;  Wide gap semiconductors;  work function;  Zinc compounds
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
You JB ; Zhang XW ; Cai PF ; Dong JJ ; Gao Y ; Yin ZG ; Chen NF ; Wang RZ ; Yan H .Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment ,APPLIED PHYSICS LETTERS,2009 ,94(26):Art. No. 262105
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