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题名: Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis
作者: Sun L;  Zhou WZ;  Yu GL;  Shang LY;  Gao KH;  Zhou YM;  Lin T;  Cui LJ;  Zeng YP;  Chu JH
发表日期: 2009
摘要: Spin-orbit interactions in a two-dimensional electron gas were studied in an InAlAs/InGaAs/InAlAs quantum well. Since weak anti localization effects take place far beyond the diffusive regime, (i.e., the ratio of the characteristic magnetic field, at which the magnetoresistance correction maximum occurs, to the transport magnetic field is more than ten) the experimental data are examined by the Golub theory, which is applicable to both diffusive regime and ballistic regime. Satisfactory fitting lines to the experimental data have been achieved using the Golub theory. In the strong spin-orbit interaction two-dimensional electron gas system, the large spin splitting energy of 6.08 meV is observed mainly due to the high electron concentration in the quantum well. The temperature dependence of the phase-breaking rate is qualitatively in agreement with the theoretical predictions. (C) 2009 The Japan Society of Applied Physics
KOS主题词: Quantum wells;  Localization;  Potential scattering;  SYSTEMS;  Time;  Heterojunctions
刊名: JAPANESE JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun L ; Zhou WZ ; Yu GL ; Shang LY ; Gao KH ; Zhou YM ; Lin T ; Cui LJ ; Zeng YP ; Chu JH .Strong Spin-Orbit Interactions in an InAlAs/InGaAs/InAlAs Two-Dimensional Electron Gas by Weak Antilocalization Analysis ,JAPANESE JOURNAL OF APPLIED PHYSICS,2009 ,48(6):Art. No. 063004
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