高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films
作者: Wang H;  Wang LL;  Sun X;  Zhu JH;  Liu WB;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H
发表日期: 2009
摘要: In this work, the influences of CCl4 on the metalorganic chemical vapor deposition (MOCVD) growth of InN were studied for the first time. It was found that the addition of CCl4 can effectively suppress the formation of metal indium (In) droplets during InN growth, which was ascribed to the etching effect of Cl to In. However, with increasing of CCl4 flow, the InN growth rate decreased but the lateral growth of InN islands was enhanced. This provides a possibility of promoting islands coalescence toward a smooth surface of the InN film by MOCVD. The influence of addition of CCl4 on the electrical properties was also investigated.
KOS主题词: Charge exchange;  Energy bands
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
71.pdf335KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Wang H ; Wang LL ; Sun X ; Zhu JH ; Liu WB ; Jiang DS ; Zhu JJ ; Zhao DG ; Liu ZS ; Wang YT ; Zhang SM ; Yang H .Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2009 ,24(7):Art. No. 075004
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Wang H]的文章
 [Wang LL]的文章
 [Sun X]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Wang H]的文章
 [Wang LL]的文章
 [Sun X]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发