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题名: A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions
作者: Ding WC;  Liu Y;  Zhang Y;  Guo JC;  Zuo YH;  Cheng BW;  Yu JZ;  Wang QM
发表日期: 2009
摘要: This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system. After deposition, the films were implanted with Er3+ at different doses. Er-doped thermal grown silicon oxide films were prepared at the same time as references. Photoluminescence features of Er3+ were inspected systematically. It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe. However, a very high annealing temperature up to 1200 degrees C is needed to optically activate Er3+ which may be the main obstacle to impede the application of Er-doped silicon nitride.
KOS主题词: Silicon nitride;  Photoluminescence
刊名: CHINESE PHYSICS B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Ding WC ; Liu Y ; Zhang Y ; Guo JC ; Zuo YH ; Cheng BW ; Yu JZ ; Wang QM .A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions ,CHINESE PHYSICS B,2009 ,18(7):3044-3048
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