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题名: Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
作者: Wang H;  Jiang DS;  Zhu JJ;  Zhao DG;  Liu ZS;  Wang YT;  Zhang SM;  Yang H
发表日期: 2009
摘要: This paper presents a study on the nucleation and initial growth kinetics of InN on GaN, especially their dependence on metalorganic chemical vapour deposition conditions. It is found that the density and size of separated InN nano-scale islands can be adjusted and well controlled by changing the V/III ratio and growth temperature. InN nuclei density increases for several orders of magnitude with decreasing growth temperature between 525 and 375 degrees C. At lower growth temperatures, InN thin films take the form of small and closely packed islands with diameters less than 100 nm, whereas at elevated temperatures the InN islands grow larger and become well separated, approaching an equilibrium hexagonal shape due to enhanced surface diffusion of adatoms. The temperature dependence of InN island density gives two activation energies of InN nucleation behaviour, which is attributed to two different kinetic processes related to In adatom surface diffusion and desorption, respectively.
KOS主题词: atomic layer deposition;  Quantum dots;  Energy bands;  Development;  Surfaces
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang H ; Jiang DS ; Zhu JJ ; Zhao DG ; Liu ZS ; Wang YT ; Zhang SM ; Yang H .Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009 ,42(14):Art. No. 145410
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