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题名: Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells
作者: Hao YF;  Chen YH;  Hao GD;  Wang ZG
发表日期: 2009
摘要: Spin splitting of the AlyGa1-yAs/GaAs/AlxGa1-xAs/AlyGa1-yAs (x not equal y) step quantum wells (QWs) has been theoretically investigated with a model that includes both the interface and the external electric field contribution. The overall spin splitting is mainly determined by the interface contribution, which can be well manipulated by the external electric field. In the absence of the electric field, the Rashba effect exists due to the internal structure inversion asymmetry (SIA). The electric field can strengthen or suppress the internal SIA, resulting in an increase or decrease of the spin splitting. The step QW, which results in large spin splitting, has advantages in applications to spintronic devices compared with symmetrical and asymmetrical QWs. Due to the special structure design, the spin splitting does not change with the external electric field.
KOS主题词: Heterostructures;  Layers
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Hao YF ; Chen YH ; Hao GD ; Wang ZG .Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells ,CHINESE PHYSICS LETTERS,2009 ,26(7):Art. No. 077104
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