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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution
作者: Song HP;  Yang AL;  Zhang RQ;  Guo Y;  Wei HY;  Zheng GL;  Yang SY;  Liu XL;  Zhu QS;  Wang ZG
发表日期: 2009
摘要: We report the synthesis and characterization of Zn-doped InN nanorods by metal-organic chemical vapor deposition. Electron microscopy images show that the InN nanorods are single-crystalline structures and vertically well-aligned. Energy-dispersive X-ray spectroscopy analyses suggest that Zn ions are distributed nonhomogenously in InN nanorods. Simulations based on diffusion model show that the doping concentration along the radial direction of InN nanorod is bowl-like from the exterior to the interior, the doping concentration decreases, and Such dopant distribution result in a bimodal EDXS spectrum of Zn across the nanorod. The study of the mechanism of doping effect is useful for the design of InN-based nanometer devices. Also, high-quality Zn-doped InN nanorods will be very attractive as building blocks for nano-optoelectronic devices.'
刊名: CRYSTAL GROWTH & DESIGN
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Song HP ; Yang AL ; Zhang RQ ; Guo Y ; Wei HY ; Zheng GL ; Yang SY ; Liu XL ; Zhu QS ; Wang ZG .Well-Aligned Zn-Doped InN Nanorods Grown by Metal-Organic Chemical Vapor Deposition and the Dopant Distribution ,CRYSTAL GROWTH & DESIGN,2009 ,9(7):3292-3295
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