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题名: Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment
作者: Cai PF;  You JB;  Zhang XW;  Dong JJ;  Yang XL;  Yin ZG;  Chen NF
发表日期: 2009
摘要: We studied the effects of hydrogen plasma treatment on the electrical and optical properties of ZnO films deposited by radio frequency magnetron sputtering. It is found that the ZnO H film is highly transparent with the average transmittance of 92% in the visible range. Both carrier concentration and mobility are increased after hydrogen plasma treatment, correspondingly, the resistivity of the ZnO H films achieves the order of 10(-3) cm. We suggest that the incorporated hydrogen not only passivates most of the defects and/or acceptors present, but also introduces shallow donor states such as the V-O-H complex and the interstitial hydrogen H-i. Moreover, the annealing data indicate that H-i is unstable in ZnO, while the V-O-H complex remains stable on the whole at 400 degrees C, and the latter diffuses out when the annealing temperature increases to 500 degrees C. These results make ZnO H more attractive for future applications as transparent conducting electrodes.
KOS主题词: Rapid thermal processing;  Heat treatment;  carrier density;  carrier density;  Diffusion;  Electrical properties;  electric conduction;  Electrochemistry;  electric conduction;  resistivity;  Hydrogen;  Glass;  Amorphous semiconductors;  deep impurities;  crowdions;  Light--Transmission;  Ion implantation;  semiconductor epitaxial layers;  diode sputtering;  crystal impurities;  Ultraviolet spectra;  Infrared spectra;  Wide gap semiconductors;  Zinc compounds
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Cai PF ; You JB ; Zhang XW ; Dong JJ ; Yang XL ; Yin ZG ; Chen NF .Enhancement of conductivity and transmittance of ZnO films by post hydrogen plasma treatment ,JOURNAL OF APPLIED PHYSICS,2009 ,105(8):Art. No. 083713
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