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题名: Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations
作者: Gai YQ;  Li JB;  Hou QF;  Wang XL;  Xiao HL;  Wang CM;  Li JM
发表日期: 2009
摘要: Thermally stimulated luminescence spectroscopy has been applied to study the deep centres in unintentionally doped high resistivity GaN epilayers grown by the metal organic chemical vapour deposition method on c-sapphire substrates. Two trap states with activation energies of 0.12 and 0.62 eV are evaluated from two luminescence peaks at 141.9 and 294.7 K in the luminescence curve. Our spectroscopy measurement, in combination with more accurate first-principles studies, provided insights into the microscopic origin of these levels. Our investigations suggest that the lower level at 0.12 eV might originate from C-N, which behaves as a hole trap state; the deeper level at 0.62 eV can be correlated with V-Ga that corresponds to the yellow luminescence band observed in low-temperature photoluminescence spectra.
KOS主题词: Vapor phase epitaxy;  Defects;  Thermoluminescence;  Carbon;  Bore;  trap
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Gai YQ ; Li JB ; Hou QF ; Wang XL ; Xiao HL ; Wang CM ; Li JM .Deep levels in high resistivity GaN detected by thermally stimulated luminescence and first-principles calculations ,JOURNAL OF PHYSICS D-APPLIED PHYSICS,2009 ,42(15):Art. No. 155403
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