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题名: The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films
作者: Sun LL;  Yan FW;  Zhang HX;  Wang JX;  Zeng YP;  Wang GH;  Li JM
发表日期: 2009
摘要: Dilute magnetic nonpolar GaN films with a Curie temperature above room temperature have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films and a subsequent rapid thermal annealing (RTA) process. The impact of the implantation and RTA on the structure and morphology of the nonpolar GaN films is studied in this paper. The scanning electron microscopy analysis shows that the RTA process can effectively recover the implantation-indUced damage to the surface morphology of the sample. The X-ray diffraction and micro-Raman scattering spectroscopy analyses show that the RTA process can just partially recover the implantation-induced crystal deterioration. Therefore, the quality of the Mn-implanted nonpolar GaN films should be improved further for the application in spintronic devices. (C) 2009 Elsevier B.V. All rights reserved.
KOS主题词: Ion implantation
刊名: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun LL ; Yan FW ; Zhang HX ; Wang JX ; Zeng YP ; Wang GH ; Li JM .The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films ,MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS,2009 ,162(3):209-212
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