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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates
作者: Sun LL;  Yan FW;  Wang JX;  Zhang HX;  Zeng YP;  Wang GH;  Li JM
发表日期: 2009
摘要: Si-doped nonpolar a-plane GaN films were grown on nanopatterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) system. The structure, morphology and field emission properties of the sample were studied by means of high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and field emission measurement. The XRD analysis shows that the sample is a nonpolar a-plane (11 (2) over bar0) GaN film. The field emission measurement shows that the nonpolar GaN films exhibit excellent field emission properties with a threshold emission field of as low as 10 V/mu m at a current density of 0.63 mu A/cm(2), and a high field emission current density of 74 mA/cm(2) at an applied field of 24 V/mu m. Moreover, the Fowler-Nordheirn plot of the sample fits a near linear relation. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
KOS主题词: electron affinity
刊名: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun LL ; Yan FW ; Wang JX ; Zhang HX ; Zeng YP ; Wang GH ; Li JM .The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates ,PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE,2009 ,206(7):1501-1503
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