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题名: Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix
作者: Yang CL;  Cui XD;  Shen SQ;  Xu ZY;  Ge WK
发表日期: 2009
摘要: Electron-spin dynamics in InAs/GaAs heterostructures consisting of a single layer of InAs (1/3-1 monolayer) embedded in (001) and (311)A GaAs matrix was studied by means of time-resolved Kerr rotation spectroscopy. The spin-relaxation time of the submonolayer InAs samples is significantly enhanced, compared with that of the monolayer InAs sample. The electron-spin-relaxation time and the effective g factor in submonolayer samples were found to be strongly dependent on the photogenerated carrier density. The contribution from both the D'yakonov-Perel' mechanism and Bir-Aronov-Pikus mechanism are discussed to interpret the temperature dependence of spin decoherence at various carrier densities.
KOS主题词: Quantum wells;  Spintronics;  Electron
刊名: PHYSICAL REVIEW B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Yang CL ; Cui XD ; Shen SQ ; Xu ZY ; Ge WK .Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix ,PHYSICAL REVIEW B,2009 ,80(3):Art. No. 035313
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