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题名: Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE
作者: Hu Q;  Wei TB;  Duan RF;  Yang JK;  Huo ZQ;  Lu TC;  Zeng YP
发表日期: 2009
摘要: Thick GaN films of high quality are directly grown on wet-etching patterned sapphire in a vertical hydride vapour phase epitaxy reactor. The optical and structural properties of GaN films are studied using scanning electronic microscopy and cathodoluminescence. Test results show that initial growth of hydride vapour phase epitaxy GaN occurs not only on the mesas but also on the two asymmetric sidewalls of the V-shaped grooves without selectivity. After the two-step coalescence near the interface, the GaN films near the surface keep on growing along the direction perpendicular to the long sidewall. Based on Raman results, GaN of the coalescence region in the grooves has the maximum residual stress and poor crystalline quality over the whole GaN film, and the coalescence process can release the stress. Therefore, stress-free thick GaN films are prepared with smooth and crack-free surfaces by this particular growth mode on wet-etching patterned sapphire substrates.
KOS主题词: Vapor phase epitaxy;  Dislocations;  Substrate;  Layer
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Hu Q ; Wei TB ; Duan RF ; Yang JK ; Huo ZQ ; Lu TC ; Zeng YP .Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE ,CHINESE PHYSICS LETTERS,2009 ,26(9):Art. No. 096801
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