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题名: Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
作者: Li H;  Wang Z;  Zhou K;  Pang JB;  Ke JY;  Zhao YW
发表日期: 2009
摘要: Undoped GaSb was irradiated by 2.6 MeV protons. The irradiation-induced defects were studied by positron lifetime spectroscopy (PLS) and photoluminescence (PL). Positron lifetime measurements showed that vacancy-type defects were introduced after irradiation, and divacancies were formed at higher irradiation dose. Annealing experiments revealed there were different annealing steps between the as grown and proton-irradiated samples, the reason for which was tentatively attributed to the formation of divacancies in the proton-irradiated samples during annealing. All the vacancy defects could be annealed out at around 500 degrees C. The PL intensity quickly fell down after proton irradiation and decreased with increasing irradiation dose, indicating that irradiation induced non-irradiative recombination centers, whose candidates were assigned to the vacancy defects induced by proton irradiation.
KOS主题词: PROTON IRRADIATION;  Defects;  Photoluminescence
刊名: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Li H ; Wang Z ; Zhou K ; Pang JB ; Ke JY ; Zhao YW .Proton irradiation-induced defects in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence ,JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS,2009 ,11(8):1122-1126
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