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题名: Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy
作者: You JB;  Zhang XW;  Song HP;  Ying J;  Guo Y;  Yang AL;  Yin ZG;  Chen NF;  Zhu QS
发表日期: 2009
摘要: Thin SiO2 interlayer is the key to improving the electroluminescence characteristics of light emitting diodes based on ZnO heterojunctions, but little is known of the band offsets of SiO2/ZnO. In this letter, energy band alignment of SiO2/ZnO interface was determined by x-ray photoelectron spectroscopy. The valence band offset Delta E-V of SiO2/ZnO interface is determined to be 0.93 +/- 0.15 eV. According to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V Delta E-C=E-g(SiO2)-E-g(ZnO)-Delta E-V, and taking the room-temperature band-gaps of 9.0 and 3.37 eV for SiO2 and ZnO, respectively, a type-I band-energy alignment of SiO2/ZnO interface with a conduction band offset of 4.70 +/- 0.15 eV is found. The accurate determination of energy band alignment of SiO2/ZnO is helpful for designing of SiO2/ZnO hybrid devices and is also important for understanding their carrier transport properties. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3204028]
KOS主题词: Light emitting diodes;  Electroluminescence;  offsets
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
You JB ; Zhang XW ; Song HP ; Ying J ; Guo Y ; Yang AL ; Yin ZG ; Chen NF ; Zhu QS .Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy ,JOURNAL OF APPLIED PHYSICS,2009 ,106(4):Art. No. 043709
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