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题名: Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling
作者: Jia, GZ;  Yao, JH;  Zhang, CL;  Shu, Q;  Liu, RB;  Ye, XL;  Wang, ZG
发表日期: 2007
摘要: Self-assembled InAs quantum dots were prepared on GaAS(100)) substrate in a solid source molecular beam epitaxy system The distribution and topographic images of uncapped dots were studied by atomic force microscope. The statistical result shows that the quantum dots are bimodal distribution. The photoluminescence spectrum results shows that the intensity of small size quantum dots dominated, which may be due to: (1) the state density of large quantum dots lower than that of small quantum dots; (2) the carriers capture rate of large size quantum dots is small relative to that of small ones; (3) there is a large strain barrier between large quantum dots and capping layer, and the large strain is likely to produce the defect and dislocation, resulting in a probability carriers transferring from large quantum dots to small dots that is very small with temperature increasing.
KOS主题词: Quantum dot
刊名: SPECTROSCOPY AND SPECTRAL ANALYSIS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Jia, GZ ; Yao, JH ; Zhang, CL ; Shu, Q ; Liu, RB ; Ye, XL ; Wang, ZG .Photoluminescence investigation of InAs bimodal self-assembled quantum dots state filling ,SPECTROSCOPY AND SPECTRAL ANALYSIS,2007 ,27(11): 2178-2181
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