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题名: Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN?
作者: Zhao, DG;  Jiang, DS;  Zhu, JJ;  Liu, ZS;  Zhang, SM;  Liang, JW;  Yang, H
发表日期: 2007
摘要: It is studied whether there is any regular relationship between the yellow luminescence band and electron mobility of n-type GaN. For a series of GaN samples grown with the same Si doping, it is found that the electron mobility decreases with an increase of relative intensity of yellow luminescence, accompanied by an increase of edge dislocation density. Further research indicates that it is acceptors introduced by edge dislocations which lead to the concomitant changes of yellow luminescence and electron mobility. Similar changes are induced by Si doping in the n-type GaN samples with relatively low edge dislocation density. However, the relationship between the yellow luminescence and electron mobility of n-type GaN is not a simple one. A light Si doping may simultaneously increase yellow luminescence and electron mobility when Si doping plays a dominant role in reducing the carrier scattering. This means that even the intensity of yellow luminescence is often used as an indicator of material quality for GaN, it does not have any monotonous correlation with the electron mobility of GaN. (c) 2007 American Institute of Physics.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  atomic layer deposition;  X-ray crystallography;  Threading dislocations;  Positron annihilation;  Gallium nitride
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao, DG ; Jiang, DS ; Zhu, JJ ; Liu, ZS ; Zhang, SM ; Liang, JW ; Yang, H .Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? ,JOURNAL OF APPLIED PHYSICS,2007 ,102(11): Art. No. 113521
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