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题名: Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion
作者: Lin, T;  Zheng, K;  Wang, CL;  Ma, XY
发表日期: 2007
摘要: AlGaInP/GaInP quantum well intermixing phenomena induced by Zn impurity diffusion at 540 degrees C were studied using room-temperature photo luminescence (PL) spectroscopy. As the diffusion time increased from 40 to 120 min, PL blue shift taken on the AlGaInP/GaInP quantum well regions increased from 36.3 to 171.6 meV. Moreover, when the diffusion time was equal to or above 60 min, it was observed firstly that a PL red shift occurred with a PL blue shift on the samples. After detailed analysis, it was found that the red-shift PL spectra were measured on the Ga0.51In0.49P buffer layer of the samples, and the mechanism of the PL red shift and the PL blue shift were studied qualitatively. (C) 2007 Elsevier B.V. All rights reserved.
KOS主题词: Diffusion;  Metal organic chemical vapor deposition;  Semiconductor lasers
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Lin, T ; Zheng, K ; Wang, CL ; Ma, XY .Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion ,JOURNAL OF CRYSTAL GROWTH,2007 ,309(2): 140-144
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