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题名: Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers
作者: Sun, J;  Zhou, DY;  Li, RY;  Zhao, C;  Ye, XL;  Xu, B;  Chen, YH;  Wang, ZG
发表日期: 2007
摘要: Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The inhomogeneous oxidation of the upper AlAs barrier in H2O2 is also observed. By comparing the morphologies of the mesa edge adjacent regions and the rest areas of the sample, it is concluded that the physicochemical reaction introduced in this letter is diffusion limited.
KOS主题词: Amorphous semiconductors;  Quantum dots;  Electron microscopy;  SELECTIVE ETCHING
刊名: MODERN PHYSICS LETTERS B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun, J ; Zhou, DY ; Li, RY ; Zhao, C ; Ye, XL ; Xu, B ; Chen, YH ; Wang, ZG .Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers ,MODERN PHYSICS LETTERS B,2007 ,21(14): 859-866
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