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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD
作者: Zhao, YM;  Sun, GS;  Liu, XF;  Li, JY;  Zhao, WS;  Wang, L;  Luo, MC;  Li, JM
发表日期: 2007
摘要: Aluminum nitride (AIN) thin films were deposited on Si (111) substrates by low pressure metalorganic chemical vapor deposition system. The effects of the V/III ratios on the film structure and surface morphology were systematically studied. The chemical states and vibration modes of AIN films were characterized by X-ray photoelectron spectroscopy and Fourier transform infrared spectrometer. The optical absorption property of the AIN films, characterized by ultraviolet-visible-near infrared spectrophotometer, exhibited a sharp absorption near the wavelength of 206 mm. The AIN (002) preferential orientation growth was obtained at the V/III ratio of 10,000 and the preferential growth mechanism is presented in this paper according to the thermodynamics and kinetics process of the AIN growth.
KOS主题词: Aluminum nitride
刊名: MODERN PHYSICS LETTERS B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhao, YM ; Sun, GS ; Liu, XF ; Li, JY ; Zhao, WS ; Wang, L ; Luo, MC ; Li, JM .Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD ,MODERN PHYSICS LETTERS B,2007 ,21(22): 1437-1445
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