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题名: Influence of different interlayers on growth mode and properties of InN by MOVPE
作者: Zhang, RQ;  Liu, XL;  Kang, TT;  Hu, WG;  Yang, SY;  Jiao, CM;  Zhu, QS
发表日期: 2008
摘要: We grow InN epilayers on different interlayers by metal organic vapour phase epitaxy (MOVPE) method, and investigate the effect of interlayer on the properties and growth mode of InN films. Three InN samples were deposited on nitrided sapphire, low-temperature InN (LT-InN) and high-temperature GaN (HT-GaN), respectively. The InN layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (XRC) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2D) step-flow-like lateral growth mode, which is much different from the three-dimensional (3D) pillar-like growth mode of LT-InN and HT-GaN buffered samples. It seems that mismatch tensile strain is helpful for the lateral epitaxy of InN film, whereas compressive strain promotes the vertical growth of InN films.
KOS主题词: Energy bands
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, RQ ; Liu, XL ; Kang, TT ; Hu, WG ; Yang, SY ; Jiao, CM ; Zhu, QS .Influence of different interlayers on growth mode and properties of InN by MOVPE ,CHINESE PHYSICS LETTERS,2008 ,25(1): 238-241
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