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题名: Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well
作者: Lu SL;  Bian LF;  Uesugi M;  Nosho H;  Tackeuchi A;  Niu ZC
发表日期: 2008
摘要: We have investigated the exciton spin relaxation in a GaInNAs/GaAs quantum well. The recombination from free and localized excitons is resolved on the basis of an analysis of the photoluminescence characteristics. The free exciton spin relaxation time is measured to be 192 ps at 10 K, while the localized exciton spin relaxation time is one order of magnitude longer than that of the free exciton. The dependence of the free exciton spin relaxation time on the temperature above 50 K suggests that both the D'yakonov-Perel' and the Elliot-Yafet effects dominate the spin relaxation process. The temperature independence below 50 K is considered to be due to the spin exchange interaction. The ultralong spin relaxation time of the localized excitons is explained to be due to the influence of nonradiative deep centers. (c) 2008 American Institute of Physics.
KOS主题词: atomic layer deposition
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Lu, SL ; Bian, LF ; Uesugi, M ; Nosho, H ; Tackeuchi, A ; Niu, ZC .Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well ,APPLIED PHYSICS LETTERS,2008 ,92(5): Art. No. 051908
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