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题名: Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method
作者: Wei, XC;  Zhao, YW;  Dong, ZY;  Li, JM
发表日期: 2008
摘要: Hall effect, Raman scattering, photoluminescence spectroscopy (PL), optical absorption (OA), mass spectroscopy, and X-ray diffraction have been used to study bulk ZnO single crystal grown by a closed chemical vapor transport method. The results indicate that shallow donor impurities (Ga and Al) are the dominant native defects responsible for n-type conduction of the ZnO single crystal. PL and OA results suggest that the as-grown and annealed ZnO samples with poor lattice perfection exhibit strong deep level green photoluminescence and weak ultraviolet luminescence. The deep level defect in as-grown ZnO is identified to be oxygen vacancy. After high-temperature annealing, the deep level photoluminescence is suppressed in ZnO crystal with good lattice perfection. In contrast, the photoluminescence is nearly unchanged or even enhanced in ZnO crystal with grain boundary or mosaic structure. This result indicates that a trapping effect of the defect exists at the grain boundary in ZnO single crystal. (C) 2007 Elsevier B.V. All rights reserved.
KOS主题词: Defects;  X-ray crystallography;  Oxides
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wei, XC ; Zhao, YW ; Dong, ZY ; Li, JM .Investigation of native defects and property of bulk ZnO single crystal grown by a closed chemical vapor transport method ,JOURNAL OF CRYSTAL GROWTH,2008 ,310(3): 639-645
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