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题名: Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition
作者: Zhang, PF;  Wei, HY;  Cong, GW;  Hu, WG;  Fan, HB;  Wu, JJ;  Zhu, QS;  Liu, XL
发表日期: 2008
摘要: ZnO films were grown at low pressure in a vertical metal-organic vapor deposition (MOCVD) reactor with a rotating disk. The structural and morphological properties of the ZnO films grown at different disk rotation rate (DRR) were investigated. The growth rate increases with the increase of DRR. The ZnO film grown at the DRR of 450 revolutions per minute (rpm) has the lowest X-ray rocking curve full width at half maximum and shows the best crystalline quality and morphology. In addition, the crystalline quality and morphology are improved as the DRR increased but both are degraded when the DRR is higher than 450 rpm. These results can help improve in understanding the rotation effects on the ZnO films grown by MOCVD. (C) 2007 Elsevier B.V. All rights reserved.
KOS主题词: X-ray crystallography;  Metal organic chemical vapor deposition;  Zinc oxide
刊名: THIN SOLID FILMS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang, PF ; Wei, HY ; Cong, GW ; Hu, WG ; Fan, HB ; Wu, JJ ; Zhu, QS ; Liu, XL .Effects of disk rotation rate on the growth of ZnO films by low-pressure metal-organic chemical vapor deposition ,THIN SOLID FILMS,2008 ,516(6): 925-928
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